A technique for measuring, displaying, recording, and modifying the spatial uniformity of implanted ions-Reference-Cited by-同舟云学术

A technique for measuring, displaying, recording, and modifying the spatial uniformity of implanted ions

Published:1976-05 Issue:5 Volume:47 Page:2161-2164
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hammer W. N.,Michel A. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.322865

Reference19 articles.

1. The evaluation of the Harwell-Lintott industrial ion implantation machine by making silicon planar resistors

2. Ion Implanted N-Type Resistors on High-Resistivity Substrates

3. Implant dose profile dependence of electrical characteristics of ion‐implanted MOS transistors

4. THE ADJUSTMENT OF MOS TRANSISTOR THRESHOLD VOLTAGE BY ION IMPLANTATION

5. Ion implantation for threshold control in COSMOS circuits

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1. Faraday cup detector array with electronic multiplexing for multichannel mass spectrometry;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-05

2. Micromachined Faraday cup array using deep reactive ion etching;Sensors and Actuators A: Physical;2002-01

3. On-line measurement of the spatial dose uniformity in ion implantation processes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-06

4. Ion implantation in III–V materials;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-05

5. ION IMPLANTATION SYSTEM CONCEPTS;Ion Implantation Science and Technology;1984