Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property-Reference-Cited by-同舟云学术

Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property

Published:2022-07-01 Issue:7 Volume:12 Page:075021
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Akamatsu Shoma¹^ORCID,Oogane Mikihiko¹²³,Tsunoda Masakiyo³⁴,Ando Yasuo¹²³

Affiliation:

1. Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

2. Center for Science and Innovation in Spintronics (Core Research Cluster), Organization for Advanced Studies, Tohoku University, Sendai 980-8577, Japan

3. Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan

4. Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

Abstract

Magnetic tunnel junctions (MTJs) with (001)-oriented D03-FeAlSi epitaxial films, which have both soft magnetic properties and surface flatness, were fabricated and characterized. A tunnel magnetoresistance (TMR) ratio of 121% was observed, and a relatively low switching field was also confirmed, reflecting the soft magnetic property of FeAlSi. However, the results of the cross-sectional TEM image of the MTJ and the bias dependence of the TMR ratio indicate that the FeAlSi/MgO interface is probably oxidized. Therefore, since an insertion layer at the interface can suppress oxidation and further improve the TMR ratio, MTJs using FeAlSi epitaxial films are promising structures suitable for applications such as MTJ-based magnetic sensors and worthy of further investigation.

Funder

Strategic Promotion of Innovative R and D

Center for Spintronics Research Network, Tohoku University

Japan Society for the Promotion of Science

Tohoku University

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0094619

Reference42 articles.