Temperature and bias voltage dependences of magnetic tunnel junction with FeAlSi electrode-Reference-Cited by-同舟云学术

Temperature and bias voltage dependences of magnetic tunnel junction with FeAlSi electrode

Published:2024-02-01 Issue:2 Volume:12 Page:
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:

Author:

Akamatsu Shoma¹²^ORCID,Lee Byung Hun³^ORCID,Hou Yasen¹,Tsunoda Masakiyo⁴⁵^ORCID,Oogane Mikihiko²⁶^ORCID,Beach Geoffrey S. D.³^ORCID,Moodera Jagadeesh S.¹⁷^ORCID

Affiliation:

1. Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology 1 , Cambridge, Massachusetts 02139, USA

2. Department of Applied Physics, Graduate School of Engineering, Tohoku University 2 , Sendai 980-8579, Japan

3. Department of Materials Science and Engineering, Massachusetts Institute of Technology 3 , Cambridge, Massachusetts 02139, USA

4. Department of Electronic Engineering, Graduate School of Engineering 4 , , Sendai 980-8579, Japan

5. Tohoku University 4 , , Sendai 980-8579, Japan

6. Center for Science and Innovation in Spintronics (Core Research Cluster) Organization for Advanced Studies, Tohoku University 5 , Sendai 980-8577, Japan

7. Department of Physics, Massachusetts Institute of Technology 6 , Cambridge, Massachusetts 02139, USA

Abstract

We fabricated magnetic tunnel junctions (MTJs) with FeAlSi free layers and investigated the tunnel magnetoresistance (TMR) properties. We found that the temperature and bias voltage dependences of the TMR effect in FeAlSi-MTJs were almost the same as MTJs with Fe free layers despite the low Curie temperature of FeAlSi. In the inelastic electron tunneling spectroscopy measured at low temperatures, the relatively large cutoff energy of magnon excitation at the FeAlSi and MgO interface was confirmed. In addition, we studied for the first time the exchange stiffness constant of FeAlSi films by Brillouin light scattering. The determined value of the stiffness constant of FeAlSi was 14.3 (pJ/m), which was similar to that of Fe. Both the large magnon cutoff at the interface and the stiffness constant of FeAlSi are considered to be the reason for the good temperature and voltage dependences of FeAlSi-MTJs.

Funder

Japan Society for the Promotion of Science

New Energy and Industrial Technology Development Organization

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0189570/19333328/021101_1_5.0189570.pdf

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