Lattice relaxation of GaAs islands grown on Si(100) substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119834
Reference20 articles.
1. Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction
2. Lattice relaxation of InAs heteroepitaxy on GaAs
3. Lattice strain relaxation at the initial stages of heteroepitaxy of GaAs on (100)Si by molecular beam epitaxy
4. Influence of nucleation procedures on stress relaxation in heterostructures: GaAs/Si (100)
5. Initial Growth Mechanism of Si on GaAs Studied by Reflection High-Energy Electron Diffraction Oscillations
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1. Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system;Journal of Materials Science: Materials in Electronics;2021-04-22
2. Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer;Journal of Crystal Growth;2020-01
3. Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates;Optoelectronics, Instrumentation and Data Processing;2014-05
4. Energetics of island formation of AlAs, GaAs, and InAs on Si(100);Journal of the Korean Physical Society;2012-03
5. Lithography-free Nanoscale Patterned Growth of GaAs on Si(001) with Sub-100-nm Silica Nanoparticles by Molecular Beam Epitaxy;Crystal Growth & Design;2011-07-26
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