Lattice relaxation of InAs heteroepitaxy on GaAs-Reference-Cited by-同舟云学术

Lattice relaxation of InAs heteroepitaxy on GaAs

Published:1987-02 Issue:1-4 Volume:81 Page:237-242
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Munekata H.,Chang L.L.,Woronick S.C.,Kao Y.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates

2. Determination of the lattice constant of epitaxial layers of III-V compounds

3. Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction

4. A. Segmuller and M. Murakami, in: Analytical Techniques for Thin Films, Treatise on Materials Science and Technology, Eds. K.N. Tu and R. Rosenberg (Academic Press, Orlando, FL, to be published).

Cited by 89 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ study of elastic strain relaxation in metamorphic InAs(Sb)/In(Ga,Al)As/GaAs heterostructures by using reflection high energy electron diffraction;Journal of Physics: Conference Series;2019-11-01

2. A review of III–V planar nanowire arrays: selective lateral VLS epitaxy and 3D transistors;Journal of Physics D: Applied Physics;2017-09-01

3. Controlled synthesis of InAs wires, dot and twin-dot array configurations by cleaved edge overgrowth;Nanotechnology;2008-01-04

4. Structural analysis of the indium-stabilizedGaAs(001)−c(8×2)surface;Physical Review B;2002-12-04

5. Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy;Journal of Crystal Growth;2002-01