Structural analysis of the indium-stabilizedGaAs(001)−c(8×2)surface-Reference-Cited by-同舟云学术

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Structural analysis of the indium-stabilizedGaAs(001)−c(8×2)surface

Published:2002-12-04 Issue:23 Volume:66 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lee T.-L.,Kumpf C.,Kazimirov A.,Lyman P. F.,Scherb G.,Bedzyk M. J.,Nielsen M.,Feidenhans’l R.,Johnson R. L.,Fimland B. O.,Zegenhagen J.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.235301/fulltext

Reference27 articles.

1. Critical layer thickness for self-assembled InAs islands on GaAs

2. Mass transfer in Stranski–Krastanow growth of InAs on GaAs

3. Effect of strain on surface morphology in highly strained InGaAs films

4. Epitaxially Self-Assembled Quantum Dots

5. Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial graphene-encapsulated surface reconstruction of Ge(110);Physical Review Materials;2018-04-13

2. Non-dipolar effects in photoelectron-based normal incidence X-ray standing wave experiments;Journal of Electron Spectroscopy and Related Phenomena;2018-01

3. Surfaces of Compound Semiconductors;Surface and Interface Science;2013-11-13

4. Ab initioand scanning tunneling microscopy study of an indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in thec(8×2)structure;Physical Review B;2010-06-07

5. Core-level shifts of the c(8×2)-reconstructed InAs(100) and InSb(100) surfaces;Journal of Electron Spectroscopy and Related Phenomena;2010-02

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