Assessment of the surface‐photovoltage diffusion‐length measurement
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98571
Reference9 articles.
1. A Method for the Measurement of Short Minority Carrier Diffusion Lengths in Semiconductors
2. Theory and experiment on the surface‐photovoltage diffusion‐length measurement as applied to amorphous silicon
3. Improvement in the surface photovoltage method of determining diffusion length in thin films of hydrogenated amorphous silicon
4. Minority‐carrier diffusion lengths in amorphous silicon‐based alloys
5. Intensity dependence of the minority‐carrier diffusion length in amorphous silicon based alloys
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of carrier transport on surface photovoltage in thin semiconductor films;Solar Energy Materials and Solar Cells;1992-04
2. Effect of midgap states in intrinsic hydrogenated amorphous silicon on sub‐band‐gap photoconductivity;Applied Physics Letters;1991-09-23
3. Collection efficiency ofa‐Si:H Schottky barriers: A computer study of the sensitivity to material and device parameters;Journal of Applied Physics;1991-06
4. Computer analysis of the role ofp‐layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous siliconp‐i‐nsolar cells;Journal of Applied Physics;1991-05-15
5. The ambipolar diffusion length measured by the surface photovoltage technique;Journal of Applied Physics;1990-08
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