Intensity dependence of the minority‐carrier diffusion length in amorphous silicon based alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333340
Reference16 articles.
1. Hole diffusion length measurements in discharge-produced aSi:H
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4. Diffusion length of holes ina‐Si:H by the surface photovoltage method
5. Collection length of holes in a‐Si:H by surface photovoltage using a liquid Schottky barrier
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1. Analytical modelling for p-i-n structured semiconductor devices;AIP Advances;2019-02
2. Surface photovoltage phenomena: theory, experiment, and applications;Surface Science Reports;1999-12
3. Comprehensive numerical simulation of defect density and temperature-dependent transport properties in hydrogenated amorphous silicon;Physical Review B;1995-11-15
4. Electron and hole μτ products in a-Si:H and the standard dangling bond model;Journal of Non-Crystalline Solids;1993-12
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