Computer analysis of the role ofp‐layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous siliconp‐i‐nsolar cells-Reference-Cited by-同舟云学术

Computer analysis of the role ofp‐layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous siliconp‐i‐nsolar cells

Published:1991-05-15 Issue:10 Volume:69 Page:7057-7066
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Arch J. K.,Rubinelli F. A.,Hou J.‐Y.,Fonash S. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.347645

Reference11 articles.

1. Amorphous silicon solar cell

2. Device physics and design of a-Si ITO/p-i-n heteroface solar cells

3. Hydrogenated amorphous silicon carbide as a window material for high efficiency a-Si solar cells

4. Physics of amorphous silicon alloyp‐i‐nsolar cells

5. Use of a carbon‐alloyed graded‐band‐gap layer at thep/iinterface to improve the photocharacteristics of amorphous silicon alloyedp‐i‐nsolar cells prepared by photochemical vapor deposition

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