High sensitivity silicon single nanowire junctionless phototransistor-Reference-Cited by-同舟云学术

High sensitivity silicon single nanowire junctionless phototransistor

Published:2016-02-08 Issue:6 Volume:108 Page:063113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Das Samaresh¹,Dhyani Veerendra¹^ORCID,Georgiev Yordan M.²,Williams David A.³

Affiliation:

1. Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi 110016, India

2. Materials Chemistry and Analysis Group, Department of Chemistry and Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Western road, Cork, Ireland

3. Hitachi Cambridge Laboratory, Hitachi Europe Ltd., Cambridge CB3 0HE, United Kingdom

Funder

Department of Electronics and Information Technology, Ministry of Communications and Information Technology (DeitY)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4941807

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5. Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity

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