Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity-Reference-Cited by-同舟云学术

Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity

Published:2014 Issue:19 Volume:6 Page:11232-11239
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Das K.¹²³,Mukherjee S.⁴⁵⁶,Manna S.⁷⁵⁶,Ray S. K.⁷⁵⁶,Raychaudhuri A. K.¹²³

Affiliation:

1. Theme Unit of Excellence in Nanodevice Technology

2. S.N. Bose National Center for Basic Sciences

3. Kolkata-700098, India

4. Advanced Technology Development Centre

5. Indian Institute of Technology

6. Kharagpur-721302, India

7. Department of Physics

Abstract

Single silicon nanowire-based MSM photodetectors show ultra high responsivity (>10⁴ A W⁻¹) in the near-infra-red region, even at zero bias. The observed photoresponse is sensitive to the polarization of the exciting light, allowing the device to act as a polarization-dependent photodetector.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR03170A

Reference48 articles.

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