Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2842426
Reference17 articles.
1. Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors
2. Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices
3. Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition
4. Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations
5. Strontium hafnate films deposited by physical vapor deposition
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