Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2767177
Reference11 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Advanced HfTaON/SiO/sub 2/ gate stack with high mobility and low leakage current for low-standby-power application
3. 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors;Muraoka K.,2005
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2. Nitrogen-concentration modulated interface quality, band alignment and electrical properties of HfTiON/Ge gate stack pretreated by trimethylaluminum precursor;Materials Research Bulletin;2017-07
3. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation;J. Mater. Chem. C;2014
4. Review and Perspective of Hf-based High-kGate Dielectrics on Silicon;Critical Reviews in Solid State and Materials Sciences;2012-07
5. Composition dependence of interface control and optimization on the performance of an HfTiON gate dielectric metal-oxide-semiconductor capacitor;Semiconductor Science and Technology;2011-09-19
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