Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms-Reference-Cited by-同舟云学术

Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms

Published:2014-11-10 Issue:19 Volume:105 Page:193510
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Höglund L.,Ting D. Z.,Soibel A.,Fisher A.,Khoshakhlagh A.,Hill C. J.,Keo S.,Gunapala S. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902022

Reference9 articles.

1. Fundamental physics of infrared detector materials

2. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

3. Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing

4. Characteristics of n-type InSb

5. Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

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