Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4835055
Reference18 articles.
1. Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing
2. Characteristics of n-type InSb
3. Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization
4. Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
5. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
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