Photoemission yield and the electron escape depth determination in metal–oxide–semiconductor structures on N+-type and P+-type silicon substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4722275
Reference28 articles.
1. Direct and Indirect Excitation Processes in Photoelectric Emission from Silicon
2. Observation of a Band of Silicon Surface States Containing One Electron Per Surface Atom
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