Charge pumping measurements on stepped‐gate metal‐nitride‐oxide‐silicon memory transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330021
Reference5 articles.
1. Charge pumping in MOS devices
2. The use of charge pumping currents to measure surface state densities in MOS transistors
3. Charge-pumping investigations on MNOS structures
4. Influence of a high-temperature hydrogen anneal on the memory characteristics of p-channel MNOS transistors
5. High-temperature hydrogen anneal of mnos structures
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The use of oxynitride layers in non-volatile S-OxN-OS (silicon-oxynitride-oxide-silicon) memory devices;LPCVD Silicon Nitride and Oxynitride Films;1991
2. Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation;IEEE Transactions on Electron Devices;1989-07
3. Trends in semiconductor memories;Microelectronics Journal;1989-01
4. A general model for interface-trap charge-pumping effects in MOS devices;Solid-State Electronics;1985-11
5. Correlation between 1/fnoise and interface state density at the Fermi level in field‐effect transistors;Journal of Applied Physics;1985-05-15
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