Trends in semiconductor memories-Reference-Cited by-同舟云学术

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Trends in semiconductor memories

Published:1989-01 Issue:1-2 Volume:20 Page:9-58
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Maes H.E.,Groeseneken G.,Lebon H.,Witters J.

Publisher

Elsevier BV

Subject

General Engineering

Reference173 articles.

1. A high-performance monolithic store;Ayling;ISSCCC Tech. Dig.,1969

2. Electronics Semiconductor Market Report,1989

3. A 4K static 5-V SRAM;Schlayeter;ISSCCC Tech. Dig.,1976

4. A 14 nsec 1-Mbit CMOS SRAM with variable bit organisation;Kohno;IEEE J. Solid State Circuits,1988

5. A 15-nsec 1-Mbit CMOS SRAM;Sasaki;IEEE J. Solid State Circuits,1988

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. History of junction technologies Commemorative talk for the 75^th anniversary of the transistor;2023 21st International Workshop on Junction Technology (IWJT);2023-06-08

2. Resistive switching characteristics and mechanisms in silicon oxide memory devices;Physical Sciences Reviews;2016-05-31

3. Electronic Devices;Reliability and Failure of Electronic Materials and Devices;2015

4. Deterioration of stressed oxides: Application to the prediction of a non-volatile memory cell endurance;Journal of Non-Crystalline Solids;2005-07

5. Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films;Journal of Applied Physics;1998-11-15

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