Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}
Author:
Affiliation:
1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
2. Institute of Computational Mathematics and Mathematical Geophysics, Russian Academy of Sciences, Lavrentiev Prosp. 6, 630090 Novosibirsk, Russia
Funder
Russian Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5022170
Reference35 articles.
1. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
2. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
3. The role of threading dislocations in the physical properties of GaN and its alloys
4. Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence
5. High-resolution electron-beam-induced-current study of the defect structure in GaN epilayers
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