Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4977094
Reference24 articles.
1. Ultraviolet light-emitting diodes based on group three nitrides
2. AlGaN Deep-Ultraviolet Light-Emitting Diodes
3. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
4. Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer
5. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
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