Optimizing GaInN/GaN light-emitting diode structures under piezoelectric polarization-Reference-Cited by-同舟云学术

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Optimizing GaInN/GaN light-emitting diode structures under piezoelectric polarization

Published:2017-09-21 Issue:11 Volume:122 Page:115703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Elsaesser David R.¹^ORCID,Durniak Mark T.²,Bross Adam S.²,Wetzel Christian¹²^ORCID

Affiliation:

1. Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180, USA

2. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180, USA

Funder

National Science Foundation (NSF)

Empire State Development's Division of Science, Technology and Innovation (NYSTAR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5003251

Reference44 articles.

1. White light emitting diodes with super-high luminous efficacy

2. Toward Smart and Ultra-efficient Solid-State Lighting

3. Ultra-High Efficiency White Light Emitting Diodes

4. An Introduction to Light-emitting Diodes

5. Energy Savings Forecast of Solid-State Lighting in General Illumination Applications

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1. Atom Probe Tomography Investigation of the Impact of Stacking Faults on InGaN/GaN Quantum Well LED Systems;Microscopy and Microanalysis;2024-07

2. Efficiency droop in zincblende InGaN/GaN quantum wells;Nanoscale;2024

3. MOVPE studies of zincblende GaN on 3C-SiC/Si(0 0 1);Journal of Crystal Growth;2023-06

4. Design tradeoffs between traditional hexagonal and emerging cubic In_XGa_(1–X)N/GaN-based green light-emitting diodes;Journal of the Optical Society of America B;2023-04-12

5. Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy;Journal of Applied Physics;2023-03-09

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