Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1579564
Reference14 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Electron spin resonance observation of Si dangling-bond-type defects at the interface of (100) Si with ultrathin layers of SiOx, Al2O3and ZrO2
3. Si dangling-bond-type defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2
4. An electron paramagnetic resonance study of the Si(100)/Al2O3 interface defects
5. Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si
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