Direct measurement of CAsin group III+C coimplanted GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356061
Reference24 articles.
1. GaAs P-N Junction Formation by Carbon Ion Implantation
2. Carbon in GaAs: Implantation and isolation characteristics
3. The Effect of Co-Implantation on the Electrical Activity of Implanted Carbon in GaAs
4. Carbon diffusion in undoped,n‐type, andp‐type GaAs
5. Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Activation of C Atoms Implanted into GaAs Annealed with Highly As-Doped a-Si:H Films;Journal of The Electrochemical Society;2002
2. Zinc and group V element co-implantation in indium phosphide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-05
3. Complete p‐type activation in vertical‐gradient freeze GaAs co‐implanted with gallium and carbon;Applied Physics Letters;1996-03-11
4. Coimplantation of carbon implanted GaAs: Energy and dose rate observations;Applied Physics Letters;1995-02-27
5. Optical and Electrical Properties of Heavily Carbon-Doped Gaas Fabricated by High-Energy Ion-Implantation;MRS Proceedings;1995
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