Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107004
Reference18 articles.
1. Direct evidence for the site of substitutional carbon impurity in GaAs
2. Carbon doping of III–V compounds grown by MOMBE
3. Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy
4. Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy
5. Hole‐dependent diffusion of implanted Mg in GaAs
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