Susceptibility of CMOS IC Devices Under Narrow-Band High Power Electromagnetic Waves by Magnetron-Reference-Cited by-同舟云学术

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Susceptibility of CMOS IC Devices Under Narrow-Band High Power Electromagnetic Waves by Magnetron

Published:2009-01-01 Issue:5-6 Volume:23 Page:571-582
ISSN:0920-5071
Container-title:Journal of Electromagnetic Waves and Applications
language:en
Short-container-title:Journal of Electromagnetic Waves and Applications

Author:

Hong J. I.¹,Hwang S. M.²,Huh C. S.³

Affiliation:

1. a Department of Electrical Engineering, INHA University, 253 Yonghyun-Dong Nam Incheon 402-751, Korea;, Email: g2051091@inhaian.net

2. b Department of Electrical Engineering, INHA University, 253 Yonghyun-Dong Nam Incheon 402-751, Korea

3. c Department of Electrical Engineering, INHA University, 253 Yonghyun-Dong Nam Incheon 402-751, Korea

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Physics and Astronomy,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1163/156939309788019813

Reference17 articles.

1. Influence of the technology on the destruction effects of semiconductors by impact of EMP and UWB pulses

2. Susceptibility of Some Electronic Equipment to HPEM Threats

3. Hardware and software simulation of transient pulse impact on integrated circuits

4. CHARACTERIZATION OF THE SUSCEPTIBILITY OF INTEGRATED CIRCUITS WITH INDUCTION CAUSED BY HIGH POWER MICROWAVES

5. Susceptibility of Microcontroller Devices due to Coupling Effects Under Narrow-Band High Power Electromagnetic Waves by Magnetron

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multinomial Regression Model for the Evaluation of Multilevel Effects Caused by High-Power Electromagnetic Environments;IEEE Transactions on Electromagnetic Compatibility;2019-02

2. Experimental Research on CCD Imaging Equipment in Intensive Electromagnetic-Pulse Environment;Acta Optica Sinica;2019

3. Theoretical models for microwave pulse induced thermal failure in CMOS integrated circuits;Microwave and Optical Technology Letters;2014-03-11

4. Understanding and modeling of internal transient latch-up susceptibility in CMOS inverters due to microwave pulses;Microelectronics Reliability;2013-12

5. Device simulation studies on latch-up effects in CMOS inverters induced by microwave pulse;Microelectronics Reliability;2013-03

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