Effect of oxygen on the threshold voltage of a-IGZO TFT-Reference-Cited by-同舟云学术

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Effect of oxygen on the threshold voltage of a-IGZO TFT

Published:2011-07-01 Issue:4 Volume:6 Page:539-542
ISSN:1975-0102
Container-title:Journal of Electrical Engineering and Technology
language:en
Short-container-title:Journal of Electrical Engineering and Technology

Author:

Chong Eu-Gene,Chun Yoon-Soo,Kim Seung-Han,Lee Sang-Yeol

Publisher

The Korean Institute of Electrical Engineers

Subject

Electrical and Electronic Engineering

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kiee/JAKO201120956424781.pdf

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using a p−n Semiconductor Heterojunction Structure;ACS Applied Materials & Interfaces;2024-06-10

2. Time-resolved Response Improvement of Oxygen-doped a-In–Ga–Sn–O Metal–Semiconductor–Metal Photodetectors by Sputtering;Sensors and Materials;2024-05-15

3. Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method;Journal of Electronic Materials;2024-04-11

4. The Endurance and Reliability Mechanisms Investigation of InGaZnO and InSnO Thin Film Transistors;IEEE Journal of the Electron Devices Society;2024

5. A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits;IEEE Transactions on Electron Devices;2023-09

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