The Endurance and Reliability Mechanisms Investigation of InGaZnO and InSnO Thin Film Transistors-Reference-Cited by-同舟云学术

The Endurance and Reliability Mechanisms Investigation of InGaZnO and InSnO Thin Film Transistors

Published:2024 Issue: Volume:12 Page:613-618
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Luo Jie¹^ORCID,Yang Yanyu¹,Yan Gangping¹^ORCID,Niu Chuqiao¹,Bao Yunjiao¹^ORCID,Lu Yupeng¹,Jiao Zhengying²,Xiang Jinjuan²,Wang Guilei²^ORCID,Xu Gaobo¹^ORCID,Yin Huaxiang¹^ORCID,Zhao Chao²^ORCID,Luo Jun¹^ORCID

Affiliation:

1. Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, China

2. Beijing Superstring Academy of Memory Technology, Beijing, China

Funder

National Key Research and Development Program of China

Scientific Instrument Developing Project of the Chinese Academy of Sciences

Strategic Priority Research Program of Chinese Academy of Sciences

Research Program of the Beijing Superstring Academy of Memory Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/6245494/10416702/10604821.pdf?arnumber=10604821

Reference25 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

4. Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10³s retention, >10¹¹ cycles endurance and L_g scalability down to 14nm

5. Mechanism Analysis of Ultralow Leakage and Abnormal Instability in InGaZnO Thin-Film Transistor Toward DRAM