Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11664-024-11035-7.pdf
Reference36 articles.
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3. T. Oshima, T. Okuno, and S. Fujita, Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors. Jpn. J. Appl. Phys. 46, 7217 (2007). https://doi.org/10.1143/JJAP.46.7217.
4. M.I. Pintor-Monroy, M.G. Reyes-Banda, C. Avila-Avendano, and M.A. Quevedo-Lopez, Tuning electrical properties of amorphous Ga2O3 thin films for deep UV phototransistors. IEEE Sens. J. 21, 14807 (2021). https://doi.org/10.1109/JSEN.2021.3074623.
5. Y. Ugai, T. Yukawa, Y.H.Y. Hatta, and S.A.S. Aoki, Reduced process method for thin-film-transistor liquid-crystal display (TFT-LCD) with dry-etching tapered ITO data bus lines. Jpn. J. Appl. Phys. 35, L1027 (1996). https://doi.org/10.1143/JJAP.35.L1027.
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