GaN nanorods grown on Si (111) substrates and exciton localization

Abstract

Abstract We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (I 1). By analyzing the Huang-Rhys parameters as a function of temperature, deduced from the phonon replica intensities, we have found that the excitons are strongly localized in the lower energy tails. The lifetimes of the I 1 and I 2 transitions were measured to be < 100 ps due to enhanced surface recombination. PACS: 78.47.+p, 78.55.-m, 78.55.Cr, 78.66.-w, 78.66.Fd