X-ray Reciprocal Space Mapping of Graded Al x Ga1 − x N Films and Nanowires-Reference-Cited by-同舟云学术

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X-ray Reciprocal Space Mapping of Graded Al x Ga1 − x N Films and Nanowires

Published:2016-02-09 Issue:1 Volume:11 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Stanchu Hryhorii V.,Kuchuk Andrian V.,Kladko Vasyl P.,Ware Morgan E.,Mazur Yuriy I.,Zytkiewicz Zbigniew R.,Belyaev Alexander E.,Salamo Gregory J.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-016-1299-7.pdf

Reference17 articles.

1. Simon J, Protasenko V, Lian C et al. (2010) Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science 327:60–64. doi: 10.1126/science.1183226

2. Li S, Ware ME, Kunets VP et al. (2011) Polarization induced doping in graded AlGaN films. Phys status solidi 8:2182–2184. doi: 10.1002/pssc.201001072

3. Kuchuk AV, Lytvyn PM, Li C et al. (2015) Nanoscale electrostructural characterization of compositionally graded Al x Ga1– x N heterostructures on GaN/sapphire (0001) substrate. ACS Appl Mater Interfaces 7:23320–23327. doi: 10.1021/acsami.5b07924

4. Carnevale SD, Kent TF, Phillips PJ et al. (2012) Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence. Nano Lett 12:915–20. doi: 10.1021/nl203982p

5. Carnevale SD, Kent TF, Phillips PJ et al. (2013) Mixed polarity in polarization-induced p–n junction nanowire light-emitting diodes. Nano Lett 13:3029–3025. doi: 10.1021/nl400200g

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