Author:
Prabaswara Aditya,Min Jung-Wook,Subedi Ram Chandra,Tangi Malleswararao,Holguin-Lerma Jorge A.,Zhao Chao,Priante Davide,Ng Tien Khee,Ooi Boon S.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference23 articles.
1. Bruni FJ (2015) Crystal growth of sapphire for substrates for high-brightness, light emitting diodes. Cryst Res Technol 50(1):133–142.
2. Nabulsi F (2015) Implications for LEDs of the shift to large-diameter sapphire wafers.
http://www.semiconductor-today.com/features/PDF/semiconductor-today-apr-may-2015-Implications-for.pdf
. Accessed 10 Dec 2017.
3. Choi JH, Zoulkarneev A, Kim SI, Baik CW, Yang MH, Park SS, Suh H, Kim UJ, Bin Son H, Lee JS, Kim M, Kim JM, Kim K (2011) Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates. Nat Photonics 5(12):763–769.
4. Choi JH, Cho EH, Lee YS, Shim MB, Ahn HY, Baik CW, Lee EH, Kim K, Kim TH, Kim S, Cho KS, Yoon J, Kim M, Hwang S (2014) Fully flexible GaN light-emitting diodes through nanovoid-mediated transfer. Adv Opt Mater 2(3):267–274.
5. Prabaswara A, Min JW, Zhao C, Janjua B, Zhang D, Albadri AM, Alyamani AY, Ng TK, Ooi BS (2018) Direct growth of III-nitride nanowire-based yellow light-emitting diode on amorphous quartz using thin Ti interlayer. Nanoscale Res Lett 13:41.
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献