Crystal growth of sapphire for substrates for high-brightness, light emitting diodes-Reference-Cited by-同舟云学术

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Crystal growth of sapphire for substrates for high-brightness, light emitting diodes

Published:2014-09-11 Issue:1 Volume:50 Page:133-142
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Bruni Frank J.¹

Affiliation:

1. P.O. Box 2413; Santa Rosa California 95405-0413 U.S.A.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201400230/fullpdf

Reference26 articles.

1. R. Lieten S. Degroote Deposition of group iii-nitrides on ge, European patent WO 2008011979 A1 http://www.google.com/patents/WO2008011979A1?cl=en

2. Strain relaxation in GaN grown on vicinal 4H‐SiC(0001) substrates

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