Author:
Prabaswara Aditya,Min Jung-Wook,Zhao Chao,Janjua Bilal,Zhang Daliang,Albadri Abdulrahman M.,Alyamani Ahmed Y.,Ng Tien Khee,Ooi Boon S.
Funder
King Abdulaziz City for Science and Technology
King Abdullah University of Science and Technology
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference42 articles.
1. Bruni FJ (2015) Crystal growth of sapphire for substrates for high-brightness, light emitting diodes. Cryst Res Technol 50(1):133–142.
2. Nabulsi F (2015) Implications for LEDs of the shift to large-diameter sapphire wafers.
http://www.semiconductor-today.com/features/PDF/semiconductor-today-apr-may-2015-Implications-for.pdf
. Accessed 10 Dec 2017.
3. Asahi H, Iwata K, Tampo H, Kuroiwa R, Hiroki M, Asami K, Nakamura S, Gonda S (1999) Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE. J Cryst Growth 201:371–375.
4. Kim JH, Holloway PH (2004) Room-temperature photoluminescence and electroluminescence properties of sputter-grown gallium nitride doped with europium. J Appl Phys 95(9):4787.
5. Bour DP, Nickel NM, Van de Walle CG, Kneissl MS, Krusor BS, Mei P, Johnson NM (2000) Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates. Appl Phys Lett 76(16):2182.
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