Abstract
AbstractMonolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.
Funder
national natural science foundation of china
national key research and development program of china
the “111 project”
the uestc shared research facilities of electromagnetic wave and matter interaction
the fundamental research funds for the central universities
international postdoctoral exchange fellowship program
china postdoctoral science foundation
the innovation group project of sichuan province
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Cited by
30 articles.
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