Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains-Reference-Cited by-同舟云学术

Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains

Published:2020-01 Issue:1 Volume:3 Page:43-50
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Wu Guangjian,Tian Bobo^ORCID,Liu Lan,Lv Wei,Wu Shuang,Wang Xudong,Chen Yan,Li Jingyu,Wang Zhen,Wu Shuaiqin,Shen Hong^ORCID,Lin Tie,Zhou Peng^ORCID,Liu Qi^ORCID,Duan Chungang,Zhang Shantao,Meng Xiangjian,Wu Shiwei^ORCID,Hu Weida^ORCID,Wang Xinran^ORCID,Chu Junhao,Wang Jianlu^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.nature.com/articles/s41928-019-0350-y.pdf

Reference41 articles.

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3. Pospischil, A., Furchi, M. M. & Mueller, T. Solar-energy conversion and light emission in an atomic monolayer p–n diode. Nat. Nanotechnol. 9, 257–261 (2014).

4. Ross, J. S. et al. Electrical control of neutral and charged excitons in a monolayer semiconductor. Nat. Commun. 4, 1474 (2013).

5. Choi, M. S. et al. Lateral MoS2 p–n junction formed by chemical doping for use in high-performance optoelectronics. ACS Nano 8, 9332–9340 (2014).

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