Vacancy-Defect-Regulated Two-Dimensional Transition-Metal Dichalcogenides for Broadband Spectrum Photodetection-Reference-Cited by-同舟云学术

Vacancy-Defect-Regulated Two-Dimensional Transition-Metal Dichalcogenides for Broadband Spectrum Photodetection

Published:2023-11-13 Issue:1 Volume:6 Page:299-309
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Li Jingtao¹,Ma Yang²,Wang Xiaoting²,Li Wenling¹,Li Jingjie¹,Zhou Mengchen²,Chen Hu²,Gong Wei¹,Zhang Yongzhe²^ORCID

Affiliation:

1. Key Laboratory of Advanced Functional Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China

2. Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China

Funder

Beijing Municipal Commission of Education

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01326

Reference52 articles.

1. Highly Sensitive Artificial Visual Array Using Transistors Based on Porphyrins and Semiconductors

2. Optoelectronic resistive random access memory for neuromorphic vision sensors

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

5. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

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