Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs-Reference-Cited by-同舟云学术

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

Published:2017-11-09 Issue:1 Volume:12 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Wang Hsiang-Chen,Chen Meng-Chu,Lin Yen-Sheng,Lu Ming-Yen,Lin Kuang-I,Cheng Yung-Chen

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-017-2359-3.pdf

Reference37 articles.

1. Deguchi T, Shikanai A, Torii K, Sota T, Chichibu S, Nakamura S (1998) Luminescence spectra from InGaN multiquantum wells heavily doped with Si. Appl Phys Lett 72:3329–3331

2. Dalfors J, Bergman JP, Holtz PO, Sernelius BE, Monemar B, Amano H, Akasaki I (1999) Optical properties of doped InGaN/GaN multiquantum-well structures. Appl Phys Lett 74:3299–3301

3. Zhang Z-H, Tan ST, Ju Z, Liu W, Ji Y, Kyaw Z, Dikme Y, Sun XW, Demir HV (2013) On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes. J Display Technol 9:226–233

4. Griffiths JT, Zhang S, Rouet-Leduc B, Fu WY, Bao A, Zhu D, Wallis DJ, How kins A, Boyd I, Stowe D, Kappers MJ, Humphreys CJ, Oliver RA (2015) Nano cathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping. Nano Lett 15:7639–7643

5. O’Donnell KP, Martin RW, Middleton PG (1999) Origin of luminescence from InGaN diodes. Phys Rev Lett 82(1):237–240

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