High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing
Author:
Funder
National Natural Science Foundation of China
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/s11671-019-3037-4.pdf
Reference18 articles.
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2. Chern W, Hashemi P, Teherani JT, Yu T, Dong Y, Xia G, Antoniadis DA, Hoyt JL (2012) High mobility high-κ-all-around asymmetrically-strained germanium nanowire trigate p-MOSFETs. In: IEDM Tech Dig, pp 387–390 https://doi.org/10.1109/IEDM.2012.6479055
3. Wu H, Luo W, Si M, Zhang J, Zhou H, Ye PD (2014) Deep sub-100 nm Ge CMOS devices on Si with the recessed S/D and channel. In: IEDM Tech Dig, pp 16.7.1–16.7.4 https://doi.org/10.1109/IEDM.2014.7047067
4. Lee CH, Nishimura T, Tabata T, Wang SK, Nagashio K, Kita K, Toriumi A (2010) Ge MOSFETs performance: impact of Ge interface passivation. In: IEDM Tech Dig, pp 18.1.1–18.1.4 https://doi.org/10.1109/IEDM.2010.5703384
5. Pillarisetty R, Chu-Kung B, Corcoran S, Dewey G, Kavalieros J, Kennel H, Kotlyar R, Le V, Lionberger D, Metz M, Mukherjee N, Nah J, Rachmady W, Radosavljevic M, Shah U, Taft S, Then H, Zelick N, Chau R (2010) High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III-V CMOS architecture. In: IEDM Tech Dig, pp 150–153 https://doi.org/10.1109/IEDM.2010.5703312
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