Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers-Reference-Cited by-同舟云学术

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Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

Published:2015-12 Issue:1 Volume:10 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Motyka Marcin,Sęk Grzegorz,Ryczko Krzysztof,Dyksik Mateusz,Weih Robert,Patriarche Gilles,Misiewicz Jan,Kamp Martin,Höfling Sven

Funder

The 7-th Framework Program of the European Commission

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-015-1183-x.pdf

Reference31 articles.

1. Kluczynski P, Jahjah M, Nähle L, Axner O, Belahsene S, Fischer M, et al. Detection of acetylene impurities in ethylene and polyethylene manufacturing processes using tunable diode laser spectroscopy in the 3-μm range. Appl Phys B. 105:2011. doi: 10.1007/s00340-011-4645-6

2. Vizbaras K, and Amann M-C. Room-temperature 3.73 μm GaSb-based type-I quantum-well lasers with quinternary barriers. Semicond Sci Technol 27:2012. doi: 10.1088/0268-1242/27/3/032001

3. Sęk G, Motyka M, Ryczko K, Janiak F, Misiewicz J, Belahsene S, et al. Band offsets and photoluminescence thermal quenching in mid-infrared emitting GaInAsSb quantum wells with quinary AlGaInAsSb barriers. Jpn J Appl Phys 49:2010. doi: 10.1143/JJAP.49.031202

4. Mawst LJ, Kirch JD, Chang CC, Kim T, Garrod T, Botez D, et al. InGaAs/AlInAs strain-compensated superlattices grown on metamorphic buffer layers for low-strain, 3.6 μm-emitting quantum-cascade-laser active regions. J Cryst Growth 370:2013. doi: 10.1016/j.jcrysgro.2012.06.053

5. Kruczek T, Fedorova KA, Sokolovskii GS, Teissier R, Baranov AN, Rafailov EU. InAs/AlSb widely tunable external cavity quantum cascade laser around 3.2 μm. Appl Phys Lett 102:2013. doi: 10.1063/1.4774088

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1. Carrier dynamics of type-II InAsSb/GaAsSb W-quantum wells emitting in mid-infrared;Light-Emitting Devices, Materials, and Applications XXVIII;2024-03-13

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3. High minority carrier mobility and electronic diffusion length in annealed GaInAsSb/GaSb active layer in Vertical Cavity Surface Emitting Laser (VCSEL);Materials Research Bulletin;2023-07

4. Significant improvement of thermal conductivity and bandgap energy blue shift in annealed GaInAsSb/GaSb;Optics & Laser Technology;2021-05

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