Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length-Reference-Cited by-同舟云学术

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Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length

Published:2017-06-17 Issue:1 Volume:12 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Chien Cheng-Yen,Wu Wen-Hsin,You Yao-Hong,Lin Jun-Huei,Lee Chia-Yu,Hsu Wen-Ching,Kuan Chieh-Hsiung,Lin Ray-Ming

Funder

Ministry of Science and Technology, Taiwan

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-017-2189-3.pdf

Reference29 articles.

1. Chow TP and Tyagi R (1994) Wide bandgap compound semiconductors for superior high-voltage unipolar power devices. IEEE T Electron Dev 41:1481-1483.

2. Davis RF (1991) III-V nitrides for electronic and optoelectronic applications. P IEEE 79:702-712.

3. Abbasi MA, Ibupoto ZH, Hussain M, Nur O and Willander M (2013) The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence. Nanoscale Res Lett 8:320.

4. Smorchkova IP, Elsass CR, Ibbetson JP, Vetury R, Heying B, Fini P, Haus E, DenBaars SP, Speck JS and Mishra UK (1999) Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy. J Appl Phys 86:4520-4526.

5. Simon J, Protasenko V, Lian C, Xing H and Jena D (2010) Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures. Science 327:60-64.

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4. Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE;Nanoscale Research Letters;2018-02-13

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