A multi-subband Monte Carlo study on dominance of scattering mechanisms over carrier transport in sub-10-nm Si nanowire FETs
Author:
Funder
Intel Corporation
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/s11671-016-1249-4.pdf
Reference32 articles.
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5. Ryu H, Kim J, Hong KH (2015) Atomistic study on dopant-distributions in realistically sized, highly p-doped si nanowires. Nano Lett 15(1): 450–456.
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