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Atomistic Study on Dopant-Distributions in Realistically Sized, Highly P-Doped Si Nanowires

  • Published:2015-01-02 Issue:1 Volume:15 Page:450-456
  • ISSN:1530-6984
  • Container-title:Nano Letters
  • language:en
  • Short-container-title:Nano Lett.

Author:

Ryu Hoon1,Kim Jongseob2,Hong Ki-Ha3

Affiliation:

1. National Institute of Supercomputing and Networking, Korea Institute of Science and Technology Information, Daejeon 305-806, Republic of Korea

2. Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-Do 446-712, Republic of Korea

3. Department of Materials Science and Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

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