Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire-Reference-Cited by-同舟云学术

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Published:2017-06-08 Issue:1 Volume:12 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Tsykaniuk Bogdan I.,Nikolenko Andrii S.,Strelchuk Viktor V.,Naseka Viktor M.,Mazur Yuriy I.,Ware Morgan E.,DeCuir Eric A.,Sadovyi Bogdan,Weyher Jan L.,Jakiela Rafal,Salamo Gregory J.,Belyaev Alexander E.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/article/10.1186/s11671-017-2171-0/fulltext.html

Reference37 articles.

1. Davis RF (1991) III-V Nitrides for Electronic and Optoelectronic Applications. Proc IEEE 79:702–712

2. Xing H, Keller S, Wu Y-F, et al (2001) Gallium nitride based transistors. J Phys Condens Matter 7139:7139–7157

3. Nakamura S, Mukai T, Senoh M (1991) High-power GaN p-n junction blue-light-emitting diodes. Jpn J Appl Phys 30:L1998–L2001

4. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y (1996) InGaN-based multi-quantum-well-structure laser diodes. Jpn J Appl Phys 35:L74–L76

5. Koschnick F, Michael K, Spaeth J, Beaumont B, Gibart P (1996) Optical detection of electron nuclear double resonance on a residual donor in wurtzite GaN. Phys Rev B 54:R11042–R11045

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers;Materials Science and Engineering: B;2020-10

2. Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers;Materials Chemistry and Physics;2020-09

3. Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction;Journal of Applied Physics;2018-01-10

4. Optical and structural study of deformation states in the GaN/AlN superlattices;Journal of Applied Physics;2017-10-21

5. Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire;Nanoscale Research Letters;2017-08-21