Author:
Balogh-Michels Zoltán,Stevanovic Igor,Borzi Aurelio,Bächli Andreas,Schachtler Daniel,Gischkat Thomas,Neels Antonia,Stuck Alexander,Botha Roelene
Abstract
AbstractIn this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO2 substrates and its effect on the laser-induced damage threshold (LIDT). The crystallization process was studied using in-situ X-ray diffractometry. We determined an activation energy for crystallization of 2.6 ± 0.5 eV. It was found that the growth of the crystallites follows a two-dimensional growth mode. This, in combination with the high activation energy, leads to an apparent layer thickness-dependent crystallization temperature. LIDT measurements @355 nm on thermally treated 3 quarter-wave thick hafnia layers show a decrement of the 0% LIDT for 1 h @773 K treatment. Thermal treatment for 5 h leads to a significant increment of the LIDT values.
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics
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