Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy

Published:2015-07-01 Issue:4 Volume:66 Page:226-230
ISSN:1339-309X
Container-title:Journal of Electrical Engineering
language:en
Short-container-title:

Author:

Chobola Zdeněk¹,Luňák Miroslav¹,Vaněk Jiří²,Hulicius Eduard³,Kusák Ivo¹

Affiliation:

1. Faculty of Civil Engineering, Department of physics, Brno University of Technology, Žižkova 17, 602 00 Brno, Czech Republic

2. Faculty of Electrical Engineering and Communication, Department of Electrotechnology, Brno University of Technology, Technická 10, 616 00 Brno, Czech Republic

3. Department of Physics AVČR, Cukrovarnická 10, 162 53 Praha 6, Czech Republic

Abstract

Abstract The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE (vertical cavity surface emitting). Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE (molecular beam epitaxy) technology. The results demonstrate that the lasers prepared by new MBE technology have higher quality than the samples prepared by using the classic MBE technology.

Publisher

Walter de Gruyter GmbH

Link

https://www.sciendo.com/pdf/10.2478/jee-2015-0036

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1. 1/f noise analysis of 980 nm InGaAs/GaAs laser diodes below the lasing threshold;Applied Optics;2020-01-14

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