High-quality ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by CVD-Reference-Cited by-同舟云学术

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High-quality ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by CVD

Published:2001-01 Issue:1 Volume:27 Page:55-57
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Ataev B. M.,Kamilov I. K.,Lundin W. V.,Mamedov V. V.,Omaev A. K.,Shakhshaev Sh. -M. O.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1345165.pdf

Reference7 articles.

1. S. A. Semiletov, G. F. Kuznetsov, A. M. Bagamadova, et al., Kristallografiya 23(2), 357 (1978) [Sov. Phys. Crystallogr. 23, 197 (1978)].

2. S.-K. Hong, H.-J. Ko, Y. Chen, and T. Yao, J. Cryst. Growth 209, 537 (2000).

3. R. D. Vispute, V. Talyansky, S. Choopun, et al., Appl. Phys. Lett. 73, 348 (1998).

4. W. V. Lundin, B. V. Pushnyi, A. S. Usikov, et al., Inst. Phys. Conf. Ser. 155, 319 (1997).

5. A. Kh. Abduev, B. M. Ataev, and A. M. Bagamadova, Izv. Akad. Nauk SSSR, Neorg. Mater., No. 11, 1928 (1987).

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1. Specific Features of the Luminescence of ZnO:Te/GaN/Al2O3 Heterostructures;Technical Physics Letters;2018-12

2. Optical properties of ZnSe on GaN (0001) grown by MBE;Journal of Crystal Growth;2009-03

3. Fabrication and properties of an n-ZnO:Ga/p-GaN:Mg/α-Al2O3 heterojunction;Semiconductors;2004-06

4. Cathodoluminescence of ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by chemical vapor deposition;Semiconductors;2002-09

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