Cathodoluminescence of ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by chemical vapor deposition-Reference-Cited by-同舟云学术

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Cathodoluminescence of ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by chemical vapor deposition

Published:2002-09 Issue:9 Volume:36 Page:977-980
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Chukichev M. V.,Ataev B. M.,Mamedov V. V.,Alivov Ya. I.,Khodos I. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1507276.pdf

Reference12 articles.

1. D. M. Bagnal, Y. F. Chen, Z. Zhu, et al., Appl. Phys. Lett. 73, 1038 (1998).

2. D. C. Look, D. C. Reynolds, J. W. Hemsky, et al., Appl. Phys. Lett. 75, 811 (1999).

3. M. Joseph, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys. 38, L2505 (1999).

4. X.-L. Guo, H. Tabata, and T. Kawai, J. Cryst. Growth 223, 135 (2001).

5. Y. E. Ryu, S. Zhu, D. C. Look, et al., J. Cryst. Growth 216, 330 (2000).

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