A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED-Reference-Cited by-同舟云学术

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A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED

Published:2009-07 Issue:17 Volume:517 Page:5157-5160
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lee Ju Young,Lee Jong Hoon,Seung Kim Hong,Lee Chung-Hyun,Ahn Hyung-Soo,Cho Hyung Koun,Kim Young Yi,Kong Bo Hyun,Lee Ho Seong

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization

2. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

3. Near-UV emitting diodes based on a transparent p–n junction composed of heteroepitaxially grown p-SrCu2O2 and n-Zno

4. Greenish-white electroluminescence from p-type CuGaS[sub 2] heterojunction diodes using n-type ZnO as an electron injector

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1. ALD growth of ZnO on GaN: Schottky barrier height engineering using ZnO interlayer;Materials Today Communications;2022-12

2. Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide;Micromachines;2021-12-20

3. Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts;Journal of Electronic Materials;2021-01-21

4. Stable Low Electron Concentration β-Ga2O3 Films Grown by Metal-Organic Chemical Vapor Deposition;ECS Journal of Solid State Science and Technology;2020-01-06

5. Facile approaches to prepare n-ZnO/(i-ZnO)/p-GaN heterojunction light-emitting diodes with white-light-electroluminescence;Applied Physics Express;2019-11-06

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