Abstract
The Si-doped β-Ga2O3 films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Then the films were annealed in oxygen to reduce the intrinsic defects effectively. The effect of the Si doping concentration and the oxygen annealing time on the properties of β-Ga2O3 films was studied in detail. It was found that the crystal structure, surface morphology and electrical characteristics of the films can be changed regularly by adjusting the Si content and annealing time. β-Ga2O3 films with high quality and stable electron concentration can be obtained by this method.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
the Science and Technology Developing Project of Jilin Province
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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