Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties

Author:

Ji XueqiangORCID,Yue Jianying,Qi Xiaohui,Yan Zuyong,Li Shan,Lu Chao,Li Zhitong,Liu ZengORCID,Qi Song,Yan Xu,Wang Jinjin,Wang Shuang,Li Peigang,Tang WeihuaORCID

Funder

Beijing University of Posts and Telecommunications

State Key Laboratory of Information Photonics and Optical Communications

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference40 articles.

1. Effects of Si concentration on electronic structure and optical gap of Si-doped β-Ga2O3;Zheng;Comput. Mater. Sci.,2020

2. Self-powered solar-blind photodetectors based on α/β phase junction of Ga2O3;Guo;Phys. Rev. Appl.,2020

3. High-performance harsh-environment-resistant GaOX solar-blind photodetectors via defect and doping engineering;Hou;Adv. Mater.,2021

4. Advances in Ga2O3 Solar-Blind UV Photodetectors;Pratiyush,2018

5. Self-powered ultraviolet photodetector with superhigh photoresponsivity (3.05 A/W) based on the GaN/Sn:Ga2O3 pn junction;Guo;ACS Nano,2018

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